CIRIMAT

Centre Interuniversitaure de Recherche et d'Ingénieire des Matériaux

CNRS, Université Paul Sabatier, Institut National Polytechnique de Toulouse

ENSIACET, 4, allée Emile Monso, BP-44362, 31030 Toulouse Cedex 4

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• Thermal ALD

• Oxydes

• Matériaux très hautes températures

• Je ne possède pas de réacteur

" In situ N2-NH3 plasma pre-treatment of silicon substrate enhances the initial growth and restricts the substrate oxidation during alumina ALD "
DOI : https://doi.org/10.1063/1.5113755

" Investigation of the initial deposition steps and the interfacial layer of Atomic Layer Deposited (ALD) Al2O3 on Si "
DOI : https://doi.org/10.1016/j.apsusc.2019.06.215

" Detailed investigation of the surface mechanisms and their interplay with transport phenomena in alumina atomic layer deposition from TMA and water "

DOI : https://doi.org/10.1016/j.ces.2018.09.037

• SAMELOR Diane