Precursor’s Day

ALD (Atomic Layer Deposition) stands as a cutting-edge thin film gas phase deposition technique, characterized by a meticulous sequential application of a metal complex or precursor alongside a reactive agent (such as H₂O or N₂O) onto a heated substrate. Each stage involves precise chemical interactions: first, the precursor reacts on the substrate surface, followed by the reagent reacting with the precursor. Purge sequences are implemented in between to expel any unwanted by-products. Essential to this process are volatile precursors, ensuring thermal stability for storage and transport, coupled with reactivity tailored to specific surface compositions.

The efficacy of ALD hinges upon molecular precursors possessing a unique combination of properties often related to its three-dimensional structure and the strength of intra- and intermolecular interactions. During this workshop, the different presentations will aim to delve into the intricate relationship between molecular structure and ALD performance, scrutinizing how various atomic parameters of the metal and ligand-such as steric size, fluorine atom presence, asymmetry, and electronic properties (donor or acceptor)-influence the volatility, stability, and reactivity of these pivotal molecules. Other practical aspects related with the actual synthesis of the precursors, their utilization in commercial systems, etc., will be as well tackled.

The aim of this one-day workshop is to provide ALD process users, regardless of their level of chemical expertise, with a practical roadmap. Through shedding light on the complex molecular dynamics that drive ALD processes, attendees will gain the necessary tools to assess and choose the most appropriate precursor families tailored to their specific ALD applications.

Attendance is free, but you must register by clicking on the following link : inscription